High Q Spiral-Type Microinductors on Silicon Substrates

Although integrated microinductors are in high demand for high frequency applications, their usefulness is limited due to their poor performance (e.g., low Q-factor, low inductance, and high parasitics). To expand the range of applicability of integrated microinductors at high frequencies, their electrical characteristics, especially quality factor and inductance, must be improved. In this research, integrated spiral-type microinduetors suspended above the silicon substrate using surface micromachining and electroplating teehniques are investigated. The silicon substrate used has resistivity ranging from 3 -7 ohms-cm and thickness ranging from 330 pm - 430 pm. These fabricated inductors have inductance ranging from 10-25 nH and Quality factor ranging from 14 - 18.

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