Process Limitation of magnetically enhanced reactive ion etch equipment
In magnetically enhanced reactive ion etching (MERIE), it is conventionally understood that the etch rate increases with increasing magnetic field strength (MFS) owing to the increase in plasma density. However, it is uncertain that this can be valid under various plasma conditions. This concern was investigated by applying a statistical experimental design to an etching of aluminium thin films in a chlorine (Cl2) plasma. It was noticeable that five experimental cases were contradictory to the reported MFS effect. The major contributor was estimated to be the dominant effect of ion bombardment. The sensitivity analysis of three significant cases revealed a little interaction between MFS and Cl2 flow. Demonstrated high sensitivity of each contradictory case reveals that the process limitations of MERIE can be circumvented by controlling the process parameters.
Similar Publications:
Oxide thin films were etched in a magnetically enhanced reactive ion etch system. The effects of CF4 flowrate on etch rate, profile anisotrop...