Q-factor Improvement of FR-4 Embedded RF Inductors by Using Hetero-Dielectric Refraction
In this paper, FR-4 embedded RF spiral inductors with hetero dielectric layers were newly designed, fabricated, and characterized in order to improve their quality factors. BaTiO3 composite high dielectric layer was applied to form the hetero dielectric layers at multi-layered FR-4 packaging substrate to reduce leakage current losses of the embedded inductors and to increase capacitance densities of embedded capacitors. The maximum quality factors of FR-4 embedded RF spiral inductors with high dielectric layer were higher than 60 which were improved by averagely 13% in comparison to those of the inductors without high dielectric layer. These embedded high-Q inductors into FR-4 packaging substrate would be necessary for advanced RF/wireless systems since they have excellent performance characteristics, small size, and light volume.
Similar Publications:
In this paper, compact passive type triplexer was newly designed and fabricated for US-CDMA handset applications. The newly designed triplexer circuit was co...
All of the biosensors which are commercially available are based on the enzymatic electrochemical analysis. Thus, they are disposable due to the use of the e...
In this paper, electroplating, screen-printing, and surface micromachining technologies are utilized to realize integrated high frequency inductors with comp...
In this paper, ultra-low voltage operated piezoelectric RF MEMS in-line dc contact switches with serial and shunt configurations have been realized by using ...